Type 2N1893S
Geometry
4500
Polarity NPN
Qual Level: JAN - JANTXV
Data Sheet No. 2N1893S
Generic Part Number:
2N1893
REF: MIL-PRF-19500/182
Features:
General-purpose low-power NPN
silicon transistor.
Housed in
TO-39
case.
Also available in chip form using
the
4500
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/182
which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter voltage V
CEO
80 V
Collector-Base Voltage V
CBO
120 V
Emitter-Base Voltage V
EBO
7.0 V
Collector - Emitter Voltage, R
BE
= 10 Ohms V
CER
100 V
Collector Current, Continuous I
C
500 mA
Power Dissipation, T
A
= 25
o
C 0.8 mW
Derate above 25
o
C 4.57 mW/
o
C
Power Dissipation, T
C
= 25
o
C 3.0 mW
Derate above 25
o
C 17.2 mW/
o
C
Operating Junction Temperature T
J
-55 to +200
o
C
Storage Temperature T
STG
-55 to +200
o
C
P
T
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
P
T
TO-39
Data Sheet No. 2N1893S
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 100 A, pulsed
Collector-Emitter Breakdown Voltage
I
C
= 30 mA, pulsed
Emitter-Base Breakdown Voltage
I
E
= 10 A, pulsed
Collector-Base Cutoff Current
V
CB
= 90 V
Collector-Base Cutoff Current
V
CB
= 90 V, T
A
= 150
o
C
Emitter-Base Cutoff Current
V
EB
= 6 V
I
CBO2
---
15
A
I
EBO
---
10
nA
I
CBO1
---
10
nA
---
V
(BR)EBO
7.0
---
V
(BR)CEO
80
---
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
(BR)CBO
120
---
V
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
I
C
= 0.1 mA, V
CE
= 10 V, pulsed
h
FE1
20
---
---
I
C
= 10 mA, V
CE
= 10 V, pulsed
h
FE2
35
---
---
I
C
= 150 mA, V
CE
= 10 V, pulsed
h
FE3
40
120
---
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA, pulsed
V
BE(sat)1
---
1.3
V dc
Collector-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA, pulsed
V
CE(sat)1
---
5.0
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 1 mA, f = 20 MHz
Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 5 mA
Small Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 10 V, I
C
= 10 mA, f = 1 kHz
Small Signal, Short Circuit Input Impedance
V
CB
= 10 V, I
C
= 5 mA
Small Signal, Open Circuit Output Admittance
V
CB
= 10 V, I
C
= 5.0 mA
Small signal, Open Circuit Reverse Voltage Transfer Ratio
V
CB
= 10 V, I
C
= 5 mA
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz < f < 1 MHz
Pulse Response
See Test Condition in MIL-S-19500/182D
t
on
+ t
off
---
30
ns
C
OBO
5.0
15
pF
hrb
---
1.5x10
-4
---
|h
FE
|
3.0
10
---
Ohms
hob
0
0.5
Ohms
hib
4.0
8.0
h
FE
35
100
---
h
FE
45
---
---
PDF 
ZIP